{"product_id":"elements-of-electromigration-electromigration-in-3d-ic-technology-9781032470276","title":"Elements of Electromigration: Electromigration in 3D IC technology","description":"\u003cp\u003e\u003c\/p\u003e\u003cblockquote\u003e\n\u003cbr\u003eTu and Liu's book provides a comprehensive account of electromigration and offers practical guidance on managing its effects in microelectronic devices, particularly in newer devices with 3D architectures. It covers key elements such as basic theory, failure modes, prevention methods, and equations for predicting mean-time-to-failure. The book is valuable for graduate students and practicing professionals in the semiconductor and electronic packaging technology industries. \u003c\/blockquote\u003e\u003cp\u003e\u003cstrong\u003eFormat\u003c\/strong\u003e: Hardback\u003cbr\u003e\u003cstrong\u003eLength\u003c\/strong\u003e: 132 pages\u003cbr\u003e\u003cstrong\u003ePublication date\u003c\/strong\u003e: 19 January 2024\u003cbr\u003e\u003cstrong\u003ePublisher\u003c\/strong\u003e: Taylor \u0026amp; Francis Ltd\u003cbr\u003e\u003c\/p\u003e \u003cp\u003e\u003cbr\u003eIn the realm of advanced microelectronic devices, where the demand for smaller, more power-efficient, cost-effective, and high-performance devices is ever-increasing, the challenges posed by electromigration become increasingly significant. Electromigration is a phenomenon where electrical currents traverse through metal interconnects, leading to their degradation and eventual failure. This phenomenon is particularly prevalent in newer devices that employ 3D architectures, where the dense packing of components and the complex interconnections create a conducive environment for electromigration.\u003cbr\u003e\u003cbr\u003eTo address these challenges, Tu and Liu have authored a comprehensive resource that caters to both graduate students and practicing professionals. This book provides a thorough account of electromigration, encompassing its basic theory, various failure modes induced by electromigration, and effective methods to prevent failure. Moreover, it offers equations for predicting mean-time-to-failure, taking into account factors such as stress, Joule heating, current crowding, and oxidation.\u003cbr\u003e\u003cbr\u003eBy delving into these critical aspects, readers will gain a deep understanding of electromigration and its implications in microelectronic devices. The book is particularly valuable for those pursuing advanced studies in electrical engineering and materials science engineering, as well as engineers working in the semiconductor and electronic packaging technology industries.\u003cbr\u003e\u003cbr\u003eIn conclusion, this book is a must-have for anyone seeking to stay ahead of the curve in the rapidly evolving field of microelectronics. Its comprehensive coverage of electromigration, coupled with practical insights and methodologies, empowers readers to design and implement microelectronic devices that are resilient to electromigration-induced failure.\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eWeight\u003c\/strong\u003e: 420g\u003cbr\u003e\u003cstrong\u003eDimension\u003c\/strong\u003e: 246 x 174 (mm)\u003cbr\u003e\u003cstrong\u003eISBN-13\u003c\/strong\u003e: 9781032470276\u003c\/p\u003e","brand":"Shulph Ink","offers":[{"title":"Hardback","offer_id":45217005371642,"sku":"9781032470276","price":85.67,"currency_code":"GBP","in_stock":true}],"url":"https:\/\/shulphink.com\/products\/elements-of-electromigration-electromigration-in-3d-ic-technology-9781032470276","provider":"Shulph Ink","version":"1.0","type":"link"}