3D Integration of Resistive Switching Memory

This book provides a comprehensive exploration of the three-dimensional integration of resistive memory, discussing materials, devices, array-level issues, and integration structures. It is a valuable resource for students, researchers, engineers, and professionals working with resistive random-access memory or 3D integration technology.

Format: Hardback
Length: 98 pages
Publication date: 13 April 2023
Publisher: Taylor & Francis Ltd

Resistive random-access memory (RRAM) holds immense potential as a next-generation nonvolatile memory solution, owing to its remarkable features such as a simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) processes. To realize the large-scale, high-density integration of RRAM, the 3D cross array emerges as the ideal choice. This comprehensive book delves into the realm of 3D integration technology for RRAM, dividing it into five distinct parts:
1. Associative Problems in Crossbar Array and 3D Architectures: This section explores the challenges and solutions related to associative operations in crossbar arrays and 3D architectures, which are crucial for realizing high-performance RRAM devices.
2. Selector Devices and Self-Selective Cells: This part focuses on the design and implementation of selector devices, such as metal-oxide-semiconductor field-effect transistors (MOSFETs), that are essential for selecting and reading RRAM cells in 3D integration. It also discusses self-selective cells, which offer the advantage of reduced power consumption and improved reliability.
3. Integration of 3D RRAM: This section discusses the techniques and processes involved in integrating 3D RRAM into CMOS devices, including die stacking, wafer bonding, and through-silicon vias (TSVs). It explores the challenges and opportunities associated with 3D integration, such as device performance, reliability, and scalability.
4. Reliability Issues in 3D RRAM: This section addresses the reliability concerns associated with 3D RRAM integration, including factors such as device failure modes, stress-induced degradation, and electromigration. It explores various reliability enhancement techniques, such as dielectric isolation, sacrificial layers, and stress management, to ensure the long-term stability of 3D RRAM devices.
5. Applications of 3D RRAM beyond Storage: This section explores the potential applications of 3D RRAM beyond traditional storage devices, such as neuromorphic computing, artificial intelligence, and sensing. It discusses the advantages of 3D RRAM in these fields and the challenges that need to be addressed to realize their full potential.

The book is designed to serve as a valuable resource for students, researchers, engineers, and professionals engaged in resistive random-access memory or 3D integration technology. It provides a comprehensive and up-to-date understanding of the latest developments in this field, enabling readers to stay at the forefront of technological advancements.

Weight: 244g
Dimension: 141 x 223 x 13 (mm)
ISBN-13: 9781032489438