Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

InAs material is crucial for high-performance HEMTs and MOS-HEMTs, enabling terahertz frequencies. Novel architectures, device parameters, and noise characterization are discussed, along with terahertz electronics for applications.

\n Format: Hardback
\n Length: 130 pages
\n Publication date: 29 September 2021
\n Publisher: Taylor & Francis Ltd
\n

The impact of InAs material on the performance of HEMTs (High Electron Mobility Transistors) and MOS-HEMTs (Metal Oxide Semiconductor High Electron Mobility Transistors) is a topic of significant interest in the field of terahertz electronics. InAs is a promising material for high-frequency applications due to its wide bandgap, high electron mobility, and excellent thermal conductivity.

In this article, we will explore the influence of InAs material on the performance of HEMTs and MOS-HEMTs, covering novel indium arsenide architectures for achieving terahertz frequencies. We will also discuss the impact of device parameters on frequency response and illustrate noise characterization of optimized indium arsenide HEMTs. Additionally, we will introduce terahertz electronics, including sources for terahertz applications.

The wide bandgap of InAs allows for the realization of high-frequency devices with relatively low power consumption. InAs-based HEMTs and MOS-HEMTs have demonstrated excellent performance in terahertz frequency ranges, with cutoff frequencies reaching up to several terahertz. One of the key advantages of InAs material is its high electron mobility, which enables high-speed operation and reduces power dissipation.

InAs-based HEMTs and MOS-HEMTs have been used in various terahertz applications, such as radar, communication systems, and sensing. For example, InAs-based HEMTs have been used in terahertz radar systems for high-resolution imaging and target detection. InAs-based MOS-HEMTs have been used in terahertz communication systems for high-speed data transmission and wireless communication.

In addition to its high frequency performance, InAs material also exhibits excellent thermal conductivity, which is crucial for high-power applications. InAs-based HEMTs and MOS-HEMTs can operate at high temperatures without experiencing significant degradation in their performance. This makes them suitable for applications in harsh environments, such as space and military applications.

However, the use of InAs material also presents several challenges. One of the main challenges is the difficulty in fabricating high-quality InAs-based devices. InAs is a brittle material, which makes it difficult to handle and process. Additionally, InAs-based devices require high-temperature processing, which can be expensive and challenging to implement.

To overcome these challenges, researchers have developed novel indium arsenide architectures for achieving terahertz frequencies. One such architecture is the InAs/GaAs heterostructure, which combines the high electron mobility of InAs with the high electron density of GaAs. This architecture has demonstrated excellent performance in terahertz frequency ranges, with cutoff frequencies reaching up to several terahertz.

Another novel architecture is the InAs/AlAs heterostructure, which combines the high electron mobility of InAs with the high electron mobility of AlAs. This architecture has also demonstrated excellent performance in terahertz frequency ranges, with cutoff frequencies reaching up to several terahertz.

In addition to these novel architectures, researchers have also explored the impact of device parameters on frequency response. One of the key parameters is the gate length, which determines the transconductance of the device. Researchers have found that increasing the gate length can improve the frequency response of InAs-based HEMTs and MOS-HEMTs.

Another important parameter is the gate bias, which determines the threshold voltage of the device. Researchers have found that adjusting the gate bias can improve the frequency response of InAs-based HEMTs and MOS-HEMTs.

Finally, researchers have also conducted noise characterization of optimized indium arsenide HEMTs. Noise characterization is important for determining the performance of terahertz devices in real-world applications. Researchers have found that optimized indium arsenide HEMTs can operate at high frequencies without generating significant noise.

In conclusion, the impact of InAs material on the performance of HEMTs and MOS-HEMTs is a topic of significant interest in the field of terahertz electronics. InAs-based HEMTs and MOS-HEMTs have demonstrated excellent performance in terahertz frequency ranges, with cutoff frequencies reaching up to several terahertz. However, the use of InAs material also presents several challenges, such as the difficulty in fabricating high-quality devices and the need for high-temperature processing. To overcome these challenges, researchers have developed novel indium arsenide architectures and explored the impact of device parameters on frequency response. Additionally, noise characterization of optimized indium arsenide HEMTs has been conducted, demonstrating that these devices can operate at high frequencies without generating significant noise. As the demand for terahertz electronics continues to grow, InAs material is likely to play an increasingly important role in the development of high-frequency devices.

\n Weight: 362g\n
Dimension: 213 x 379 x 15 (mm)\n
ISBN-13: 9780367554149\n \n