Shulph Ink
Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
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Excellent- More about Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility, and this book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It also discusses novel indium arsenide architectures for achieving terahertz frequencies and the impact of device parameters on frequency response.
Format: Paperback / softback
Length: 130 pages
Publication date: 25 September 2023
Publisher: Taylor & Francis Ltd
The high electron mobility transistor (HEMT) holds remarkable potential for surpassing conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) in terms of performance. Moreover, indium arsenide (InAs) emerges as an ideal candidate for constructing HEMT devices due to its exceptional peak electron mobility. In the book titled "Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications," the authors delve into the characterization of HEMT devices based on InAs III-V material, aiming to achieve exceptional current and frequency performance. This comprehensive resource elucidates various device architectures, including InAs-based single gate (SG) HEMTs and double gate (DG) HEMTs, to enhance performance. Additionally, the book explores the noise analysis of InAs-based SG and DG-HEMTs, emphasizing the importance of proper device parameters in attaining the terahertz frequency regime.
The primary objective of this book is to meticulously characterize the InAs device to facilitate the operation of terahertz electronics, encompassing sources for terahertz applications. This text is particularly valuable to researchers and graduate students in the fields of Electronics Engineering, High Electron Mobility Transistors, Semiconductors, Communications, and Nanodevices. By delving into the intricacies of InAs-based HEMT architectures and their applications in terahertz electronics, this book provides a valuable resource for advancing the state-of-the-art in this rapidly evolving field.
Weight: 453g
Dimension: 234 x 156 (mm)
ISBN-13: 9780367554156
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