Defects in Self-Catalysed III-V Nanowires

This thesis explores the formation and removal of defects in self-catalysed III-V semiconductor nanowires,using advanced electron microscopy techniques and in-situ heating holder. It reveals that many defects can be eliminated,and annealing strategies are presented to improve crystal quality and device performance.

Format: Paperback / softback
Length: 143 pages
Publication date: 31 January 2023
Publisher: Springer Nature Switzerland AG

This thesis delves into a comprehensive examination of the inherent imperfections present in self-catalysed III-V semiconductor nanowires. Through the utilization of advanced electron microscopy techniques, the interface sharpness and defects at both the atomic and macroscopic scales are meticulously analyzed. It is discovered that these nanowire systems exhibit a remarkable variety and quantity of defect structures, some of which have never been observed before. To gain insights into the formation of these defects, conditions during nanowire growth can be replicated inside the microscope using the latest generation of in-situ heating holders. This enables the study of defect formation, dynamics, and removal, revealing that many of these defects can be effectively eliminated. This critical information holds immense significance in achieving perfect nanowire growth.

Furthermore, the author presents annealing strategies aimed at enhancing crystal quality, thereby improving device performance. By carefully controlling the annealing process, it is possible to minimize the presence of defects and enhance the overall structural and electrical properties of the nanowires. This research contributes to our understanding of the complexities involved in nanowire growth and provides valuable insights into developing advanced semiconductor devices.

Weight: 256g
Dimension: 235 x 155 (mm)
ISBN-13: 9783030940645
Edition number: 1st ed. 2022