Handbook of Silicon Carbide Materials and Devices

This handbook provides an overview of silicon carbide (SiC), a power semiconductor for the 21st century, including its key properties, related technologies, developments, and challenges. It consists of 15 chapters and is divided into four sections, covering presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations, and more. It is a valuable resource for engineers, materials scientists, and researchers interested in SiC technology.

Format: Hardback
Length: 444 pages
Publication date: 04 May 2023
Publisher: Taylor & Francis Ltd

This comprehensive handbook delves into the intricate world of silicon carbide (SiC), a power semiconductor poised to shape the 21st century. It offers a detailed exploration of its key properties, shedding light on the technologies associated with it and highlighting the remarkable advancements and achievements witnessed in recent years. The book is structured into 15 chapters, with the first chapter authored by Professor W. J. Choyke, a renowned expert in the field. The content is organized into four sections, covering a wide range of topics. The chapters delve into the historical background of presolar SiC, the intricate processes involved in its growth, including vapor-liquid-solid techniques, spectroscopic investigations of 3C-SiC/Si interfaces, and the challenges faced in the 21st century. The section on CVD principles and techniques explores the fundamentals of chemical vapor deposition, homoepitaxy of 4H-SiC, cubic SiC growth on 4H-SiC substrates, thermal oxidation processes, MOS interface development, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy, imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction.

This comprehensive work serves as a valuable resource for engineers, materials scientists, designers, engineers, scientists, postgraduate students, and entrepreneurs alike. It provides a deep understanding of the engineering, materials, and fundamental science aspects of silicon carbide, enabling professionals to stay at the forefront of this rapidly evolving field. With its extensive coverage and insightful analysis, this handbook is destined to become a staple for anyone seeking to advance their knowledge and expertise in the 21st-century power semiconductor industry.

Dimension: 254 x 178 (mm)
ISBN-13: 9780367188269