Shulph Ink
High-k Materials in Multi-Gate FET Devices
High-k Materials in Multi-Gate FET Devices
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Excellent- More about High-k Materials in Multi-Gate FET Devices
This book discusses the use of high-k materials in multi-gate FET devices to improve their performance. It covers emerging challenges, fabrication, characterization, and application of high-k dielectrics. It also considers future research directions in this field.
Format: Paperback / softback
Length: 164 pages
Publication date: 25 September 2023
Publisher: Taylor & Francis Ltd
High-k Materials in Multi-Gate FET Devices is a comprehensive resource that delves into the utilization of high-k materials in advanced FET devices. It addresses emerging challenges and considerations in the engineering and applications of these devices, while also exploring the associated technologies. The book provides a foundational understanding of FET devices, highlights the motivation behind multi-gate FETs, and discusses their fabrication and characterization. It conducts a thorough analysis of the impact of high-k dielectrics on the gate-oxide and gate-sidewall spacers in emerging multi-gate FET architectures. Furthermore, it offers detailed applications of high-k materials for advanced FET devices, considering their potential in various fields such as electronics, IT, and materials science. The book also explores future research directions in this field, making it an invaluable resource for researchers, engineers, and students engaged in studying nanodevices, FinFETs, Tunnel FETs, and device-circuit codesign issues.
Weight: 453g
Dimension: 234 x 156 (mm)
ISBN-13: 9780367639693
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