Integrated Electronics on Aluminum Nitride: Materials and Devices

This thesis explores the principles, device physics, and technological applications of electronics based on aluminum nitride, a semiconductor with an ultra-wide bandgap. It discusses the discovery of high-density two-dimensional hole gases in undoped heterojunctions, enabling high performance nFETs and pFETs, as well as wide bandgap RF, mm-wave, and CMOS applications.

Format: Hardback
Length: 255 pages
Publication date: 07 December 2022
Publisher: Springer International Publishing AG

This thesis delves into the realm of electronics, focusing on the utilization of ultra-wide bandgap semiconductor aluminum nitride. It presents a comprehensive framework that encompasses the principles, device physics, and technological applications of this material. Within its pages, the thesis explores the fundamental concepts of electrostatics and transport properties within semiconductor heterostructures based on aluminum nitride. It sheds light on the discovery of high-density two-dimensional hole gases in undoped heterojunctions, highlighting their role in the development of high-performance nFETs and pFETs. Furthermore, it delves into the wide range of applications, including wide bandgap RF, mm-wave, and CMOS technologies, where these high conductivity n- and p-type channels find profound use.

The thesis goes beyond the mere discussion of transistor performance and explores the material advantages of aluminum nitride. It highlights its high thermal conductivity and piezoelectric coefficient, which not only enable the high performance of transistors but also facilitate the monolithic integration of passive elements such as high-frequency filters. This integration opens up a new realm of possibilities, enabling the development of compact and efficient integrated RF electronics with a reduced form factor.

In conclusion, this thesis provides a comprehensive exploration of the world of electronics, focusing on the remarkable properties of ultra-wide bandgap semiconductor aluminum nitride. It offers a deep understanding of the principles, device physics, and technological applications of this material, paving the way for innovative advancements in various fields of electronics.

Weight: 576g
Dimension: 235 x 155 (mm)
ISBN-13: 9783031171987
Edition number: 1st ed. 2022