Kinetic Studies in GeO2/Ge System: A Retrospective from 2021

Kinetic Studies in GeO2/Ge System: A Retrospective from 2021 explores reaction kinetics in GeO2/Ge systems, focusing on the fundamentals of the GeO2/Ge interface and its applications in advanced CMOS devices. It reviews the development of MOS technology and discusses the challenges of emerging Ge as a channel material. The study analyzes degradation, passivation techniques, desorption kinetics, and oxidation kinetics of GeO2/Ge, comparing it to SiO2/Si systems. It is a valuable resource for researchers, professionals, and students in electronic materials, condenser matter physics, microelectronic engineering, and semiconductors.

Format: Hardback
Length: 134 pages
Publication date: 14 June 2022
Publisher: Taylor & Francis Ltd

Kinetic Studies in GeO2/Ge Systems: A Retrospective from 2021 delves into the realm of reaction kinetics within GeO2/Ge systems, with the primary objective of showcasing the fundamental principles governing the GeO2/Ge interface and providing valuable insights into the unique characteristics and performance of Ge (germanium) in advanced complementary metal oxide semiconductor (CMOS) devices. This comprehensive book begins by exploring the evolution of MOS technology and delving into the potential of emerging Ge as a contentious channel material, once considered a promising replacement for Si (silicon) in advanced nodes. Systematically analyzing various aspects of GeO2/Ge stacks, this study aims to shed light on the characteristics and reaction principles of the system. These aspects include GeO2/Ge degradation, Ge passivation techniques, desorption kinetics of GeO from GeO2/Ge, the relationship between GeO2 crystallization and GeO2/Ge interface reaction, and the oxidation kinetics of Ge. Drawing upon the intrinsic properties of GeO2/Ge, the author compares it with prevalent SiO2/Si systems and highlights the essential distinctions between the two, contributing to quality control, process optimization, and technological advancements in GeO2/Ge.

This book serves as a valuable resource for researchers, professionals, and students engaged in the fields of electronic materials, condenser matter physics, microelectronic engineering, and semiconductors. Its comprehensive coverage and insightful analysis make it an essential read for those seeking to advance their understanding of GeO2/Ge systems and their applications in the electronic industry.

Dimension: 229 x 152 (mm)
ISBN-13: 9781032257440