Modern Silicon Carbide Power Devices

Silicon Carbide power devices are increasingly used in electric vehicles and charging stations, and this book provides a comprehensive design guide for them. It covers device structures, analytical models, and innovative structures for achieving superior high-frequency operation. It is a valuable resource for professionals, academics, researchers, and graduate students in electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.

Format: Hardback
Length: 672 pages
Publication date: 12 October 2023
Publisher: World Scientific Publishing Co Pte Ltd

Silicon Carbide power devices are gaining widespread adoption in various applications, including electric vehicles and charging stations. The demand for a comprehensive resource to understand the fundamental physics of these devices and cultivate engineers with in-depth knowledge is significant. This unique compendium offers a comprehensive design guide for Silicon Carbide power devices. It systematically outlines the device structures and analytical models used to compute their characteristics. The device structures covered include the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT, and BiDFET. Special emphasis is placed on innovative structures that achieve excellent voltage blocking and on-resistance. This valuable textbook and reference provides valuable insights for achieving superior high-frequency operation and highlights manufacturing technology for the devices. It will benefit professionals, academics, researchers, and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.

ISBN-13: 9789811284274