MOS Interface Physics, Process and Characterization

The electronic device based on Metal Oxide Semiconductor (MOS) structure is a fundamental building block of the information society. This book tries to answer five key questions about MOS structure, including why they are bonded together so closely, which physical phenomena occur, how they affect the performance, and how to control them through process. Principles are explained based on common experimental phenomena, with experimental examples focusing on MOS structure.

Format: Paperback / softback
Length: 162 pages
Publication date: 29 January 2024
Publisher: Taylor & Francis Ltd

The electronic device based on the Metal Oxide Semiconductor (MOS) structure holds immense significance as a fundamental component of large-scale integrated circuits (LSICs). It serves as a cornerstone of the information society, playing a pivotal role in achieving high performance devices and integrated circuits. The quality of the MOS structure is paramount in determining the overall performance of electronic systems.

In this context, the control of interface physics, process, and characterization methods becomes crucial in determining the quality of MOS structures. This book aims to address five key questions:

Why are high-performance integrated circuits closely bonded with MOS structures?

What physical phenomena occur in MOS structures?

How do these phenomena impact the performance of MOS structures?

How can we observe and quantify these phenomena scientifically?

How can we control these phenomena through process?

Principles are explained based on common experimental phenomena, ranging from sensibility to rationality, through abundant experimental examples focused on MOS structures. These examples include specific experimental steps with a strong level of operability, making the content accessible and practical for engineers, academics, and postgraduates in semiconductor-related fields.

This book serves as an essential reference for engineers engaged in semiconductor-related fields and academics and postgraduates specializing in microelectronics. It provides a comprehensive understanding of MOS structures, their physical phenomena, and their impact on electronic system performance. By addressing these key questions, this book contributes to the advancement of knowledge and technology in the field of microelectronics.

Weight: 453g
Dimension: 229 x 152 (mm)
ISBN-13: 9781032106281