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AfreenKhursheed,Kavita Khare

Nano Interconnects: Device Physics, Modeling and Simulation

Nano Interconnects: Device Physics, Modeling and Simulation

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  • More about Nano Interconnects: Device Physics, Modeling and Simulation

This book provides a comprehensive overview of nanotube transistors and interconnects, covering their properties, performance, and applications. It discusses the structure, properties, and characteristics of carbon nanotubes and graphene-based on-chip interconnect, as well as the issues arising due to downscaling of device size.

\n Format: Hardback
\n Length: 216 pages
\n Publication date: 16 December 2021
\n Publisher: Taylor & Francis Ltd
\n


Nanotube Transistors and Interconnects: A Comprehensive Coverage

Nanotube transistors and interconnects represent a groundbreaking advancement in semiconductor technology, offering immense potential for future electronic devices. In this comprehensive guide, we delve into the fundamental concepts related to nanotube transistors and interconnects, exploring their properties, performance, and practical applications.

Carbon nanotubes (CNTs) are a unique class of materials with extraordinary properties that make them ideal for electronic applications. Their small size, high aspect ratio, and exceptional electrical and thermal conductivity make them suitable for building nanoscale transistors, interconnects, and sensors. CNTs have been extensively studied for their potential to revolutionize electronic devices, including high-speed computers, energy-efficient sensors, and medical imaging systems.

One of the key advantages of CNTs is their ability to achieve high on-state current densities, which can lead to significant improvements in transistor performance. CNTs also exhibit excellent thermal conductivity, allowing for efficient heat dissipation in electronic devices. Additionally, CNTs have a high chemical resistance, making them suitable for various applications, including microelectromechanical systems (MEMS) and wearable electronics.

In this section, we will discuss the properties and performance of practical nanotube devices and related applications. We will explore the structure, properties, and characteristics of CNTs and how they are being used in various electronic devices, such as field-effect transistors (FETs), bipolar transistors, and inverters. We will also examine the challenges and opportunities associated with integrating CNTs into electronic circuits and discuss the potential for CNT-based quantum computing and spintronics.

Graphene, a two-dimensional carbon material, has emerged as a promising alternative to traditional silicon-based interconnects. Graphene's high electrical conductivity, thermal conductivity, and mechanical strength make it an ideal material for on-chip interconnects. Graphene-based interconnects have the potential to achieve high bandwidth, low power consumption, and high reliability, making them suitable for high-performance computing, data storage, and communication systems.

In this section, we will examine the structure, properties, and characteristics of graphene-based on-chip interconnect. We will discuss the challenges and opportunities associated with integrating graphene into electronic circuits and explore the potential for graphene-based quantum computing and spintronics. We will also examine the interconnect power and interconnect delay issues arising due to downscaling of device size and how graphene-based interconnects can address these challenges.

In conclusion, nanotube transistors and interconnects represent a promising technology for the future of electronic devices. CNTs have exceptional properties that make them ideal for building nanoscale transistors, interconnects, and sensors. Graphene-based on-chip interconnects have the potential to achieve high bandwidth, low power consumption, and high reliability, making them suitable for high-performance computing, data storage, and communication systems. As the research and development in this field continue, we can expect to see significant advancements in nanotube transistors and interconnects, leading to the development of new and innovative electronic devices.

\n Weight: 498g\n
Dimension: 159 x 242 x 21 (mm)\n
ISBN-13: 9780367610487\n \n

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