Recent Advances in PMOS Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact

This book discusses advances in Negative Bias Temperature Instability (NBTI) and its impact on semiconductor devices, including ultra-fast measurements and modelling of parametric drift, BTI Analysis Tool, Reaction Diffusion model, and Nitrogen and Germanium incorporation. It also highlights the differences between (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs.

Format: Paperback / softback
Length: 311 pages
Publication date: 27 November 2022
Publisher: Springer Verlag, Singapore

This comprehensive book delves into the realm of Negative Bias Temperature Instability (NBTI) and its advancements, making it an invaluable resource for researchers and professionals in the field of semiconductor devices. NBTI remains a crucial reliability concern for CMOS transistors and circuits, highlighting the need for robust technology to mitigate its effects. The development of NBTI-resistant solutions relies on a combination of precise stress conditions, artifact-free measurements, and accurate physics-based models to accurately predict degradation at end-of-life. Furthermore, understanding the interplay between process, material, and device architectural factors is essential in developing resilient NBTI technology.

The book explores various aspects of NBTI, including ultra-fast measurements and modeling of parametric drift in different transistor architectures. It discusses the use of the BTI Analysis Tool (BAT), a comprehensive physics-based framework, to simulate the measured time kinetics of parametric drift under various stress and recovery biases, temperatures, pulse duty cycles, and frequencies. The Reaction Diffusion (RD) model is employed to simulate the generation of interface traps, the Transient Trap Occupancy Model (TTOM) to quantify charge occupancy of these traps, the Activated Barrier Double Well Thermionic (ABDWT) model to simulate hole trapping in pre-existing bulk gate insulator traps, and the Reaction Diffusion Drift (RDD) model to simulate bulk trap generation within the BAT framework.

It is important to note that NBTI parametric drift arises from the uncorrelated contributions of trap generation (interface and bulk) and trapping processes. The book also delves into the impact of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress on NBTI behavior. By examining these factors, researchers and professionals can gain a deeper understanding of NBTI and develop strategies to mitigate its detrimental effects on semiconductor devices.

In conclusion, this book serves as a valuable resource for anyone seeking to advance their knowledge and expertise in NBTI and its applications in semiconductor devices. Its comprehensive coverage of topics, coupled with detailed analysis and modeling techniques, makes it an essential tool for researchers, engineers, and industry professionals working in this field.

Weight: 516g
Dimension: 235 x 155 (mm)
ISBN-13: 9789811661228
Edition number: 1st ed. 2022