Stress and Strain Engineering at Nanoscale in Semiconductor Devices

This book discusses the use of strain engineering to enhance the performance of advanced semiconductor devices, including FinFETs and III-V Nitride-based devices. It covers stressstrain engineering, mobility models, and TCAD design for modeling strain-engineered FinFETs. It is intended for graduate students and researchers in solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Format: Hardback
Length: 260 pages
Publication date: 01 July 2021
Publisher: Taylor & Francis Ltd

In the realm of advancing semiconductor technology, researchers are vigorously pursuing the integration of diverse functionalities onto a single chip, a phenomenon known as "More-than-Moore." This pursuit is driven by the impending limitation of miniaturization, known as "More-Moore." To meet this challenge, strain engineering has emerged as a primary technique for enhancing the performance of advanced semiconductor devices. Written from an engineering applications perspective, this comprehensive book encompasses a wide range of semiconductor devices, including Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. It provides the necessary background and physical insight to understand the emerging and future developments in nanoscale CAD (TCAD) design.

The book delves into the realm of stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices. It offers a comprehensive mobility model for strained substrates, encompassing global and local strain techniques, and their implementation in device simulations. The author explains the development of strain/stress relationships and their impact on the band structures of strained substrates. Additionally, the book employs design of experiments to identify the optimal process conditions for strain engineering. It showcases the use of TCAD for modeling strain-engineered FinFETs, enabling accurate predictions of DC and AC performance.

This book is a valuable resource for graduate students and researchers specializing in solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices. It serves as a comprehensive guide to advancing the understanding and application of strain engineering in semiconductor technology.

Weight: 560g
Dimension: 161 x 241 x 22 (mm)
ISBN-13: 9780367519292