Stress and Strain Engineering at Nanoscale in Semiconductor Devices

This book discusses the use of strain engineering to enhance the performance of advanced semiconductor devices, including FinFETs and III-V Nitride-based devices. It covers stressstrain engineering, mobility models, and TCAD design for modeling strain-engineered FinFETs. It is intended for graduate students and researchers in solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Format: Paperback / softback
Length: 260 pages
Publication date: 25 September 2023
Publisher: Taylor & Francis Ltd

In the realm of advancing semiconductor technology, researchers are vigorously pursuing the integration of diverse functionalities onto a single chip, a phenomenon known as "More-than-Moore." This pursuit is driven by the impending limitation of miniaturization, known as "More-Moore." To achieve this goal, strain engineering has emerged as a primary technique, playing a pivotal role in enhancing the performance of advanced semiconductor devices. Written from an engineering applications perspective, this comprehensive book encompasses a wide range of semiconductor devices, including Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. It provides the necessary background and physical insight to understand the emerging and future developments in nanoscale CAD (TCAD) design.

The book delves into the realm of stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices. It offers a comprehensive mobility model for strained substrates, encompassing global and local strain techniques, and their implementation in device simulations. The author elucidates the development of strain/stress relationships and their profound effects on the band structures of strained substrates. Additionally, the book employs design of experiments to identify the optimal process conditions, ensuring efficient and reliable device manufacturing.

Furthermore, the book showcases the use of TCAD for modeling strain-engineered FinFETs, enabling accurate predictions of DC and AC performance. This book is a valuable resource for graduate students and researchers engaged in the study of solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices. Its comprehensive coverage and practical insights make it an essential tool for advancing knowledge and innovation in the field of semiconductor technology.

Weight: 453g
Dimension: 234 x 156 (mm)
ISBN-13: 9780367519339