Dopants and Defects in Semiconductors

This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. It also includes additional chapter problems and worked examples and provides more detail on solid-state lighting (LEDs and laser diodes).

Format: Paperback / softback
Length: 350 pages
Publication date: 31 March 2021
Publisher: Taylor & Francis Ltd

The book stands out from the typical textbook in its exceptional ability to offer detailed and practical examples of real-world defect physics, providing a comprehensive and accessible introduction to the field. ―Materials Today―

This revised edition is a comprehensive and up-to-date resource for understanding the fundamental principles of semiconductors. It includes a new chapter that delves into the latest technology and applications of semiconductors, expanding the scope of its coverage. In addition to incorporating additional chapter problems and worked examples, the book offers a deeper exploration of solid-state lighting (LEDs and laser diodes), providing valuable insights into this emerging field.

The authors have successfully achieved a unified overview of dopants and defects, offering a solid foundation for both experimental methods and the theoretical understanding of defects in semiconductors.

Matthew D. McCluskey holds a professorship in the Department of Physics and Astronomy and the Materials Science Program at Washington State University (WSU), located in Pullman, Washington. He earned his Ph.D. in Physics from the University of California (UC), Berkeley.

Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a distinguished member of the National Academy of Engineering. He holds a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Weight: 685g
Dimension: 254 x 178 (mm)
ISBN-13: 9780367781439
Edition number: 2 New edition