HEMT Technology and Applications

This book covers state-of-the-art research in GaN and Ga2O3 HEMTs, including materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. It presents basic operation principles, types of structures, and semiconductor device physics, as well as numerical modeling and TCAD simulations for high-frequency and high-power applications. The chapters focus on device characteristics, fabrication techniques, and circuit design for low noise amplifier, oscillator, power electronics, and biosensor applications. It is primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.

Format: Hardback
Length: 245 pages
Publication date: 24 June 2022
Publisher: Springer Verlag, Singapore

This comprehensive book delves into two vital domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. It offers a comprehensive exploration of these technologies, encompassing a wide range of topics such as materials systems, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book begins by providing a foundational understanding of HEMT principles, including their basic operation principles, types of HEMT structures, and semiconductor device physics. It then delves into numerical modeling and TCAD simulations for high-frequency and high-power applications, enabling readers to gain insights into device behavior.

The chapters in the book cover various device characteristics of HEMT, including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The emphasis is placed on showcasing the latest fabrication techniques of HEMT and circuit design for diverse applications in low-noise amplifier, oscillator, power electronics, and biosensor domains. The book's central focus is on harnessing the potential of HEMT technologies to meet the ever-growing demands of the industry, fostering innovation in materials, design, modeling, simulation, processes, and circuits.

This book is designed to be of immense value to undergraduate/postgraduate students, researchers, and practitioners in their respective fields. It serves as a valuable resource for those seeking to stay updated with the latest advancements in GaN HEMT and Ga2O3 HEMT technologies, enabling them to contribute to the ongoing research and development in this field.

Weight: 553g
Dimension: 235 x 155 (mm)
ISBN-13: 9789811921643
Edition number: 1st ed. 2023