Magnetic Memory Technology: Spin-transfer-Torque MRAM and Beyond

Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond provides a comprehensive resource for students and professionals to understand MRAM and other non-volatile memories, including PCM and ReRAM. It explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states, resulting in power savings and reliability. The book covers basic electromagnetism, magnetism and magnetic materials, GMR and TMR devices, spin current and dynamics, and different categories of magnetic random-access memory. It is perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on spintronics.

\n Format: Hardback
\n Length: 352 pages
\n Publication date: 09 February 2021
\n Publisher: John Wiley and Sons Ltd
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Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond is a comprehensive resource that provides a deep understanding of magnetic random-access memory (MRAM) and its applications. Written by experts in the field, the book offers a blend of foundational and advanced treatments, catering to students and professionals seeking to explore MRAM and other non-volatile memories, such as phase-change memory (PCM) and resistive random-access memory (ReRAM).

The authors begin by introducing the fundamentals of magnetism and electron spin, providing readers with a solid foundation for understanding MRAM technology. They then delve into the physics of magnetic tunnel junction (MTJ) devices, which are crucial in MRAM applications. The book offers a comprehensive analysis of MTJ devices, covering topics such as their structure, operation, and characteristics.

One of the key advantages of MRAM is its ability to provide memory without requiring the atoms inside the device to move when switching states. This results in significant power savings and reliability, making MRAM an attractive option for high-performance computing and other demanding applications. The authors discuss the current state of academic research in MRAM technology, focusing on reducing the amount of energy needed to reorient magnetization.

The book also covers various topics related to MRAM, including an introduction to basic electromagnetism, magnetism, and magnetic materials. Readers will gain a thorough understanding of the classification and properties of magnetic thin films, as well as the material preparation and characterization processes involved. Additionally, the book explores Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical models.

The authors further discuss spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect. Different categories of magnetic random-access memory, such as field-write mode MRAM and Spin-Torque-Transfer (STT) MRAM, are also discussed in detail.

Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond is an invaluable resource for anyone interested in MRAM technology and its applications. With its comprehensive coverage of foundational and advanced topics, the book equips readers with the knowledge and skills necessary to fully comprehend MRAM and its potential impact on the future of computing and storage.

\n Weight: 628g\n
Dimension: 160 x 238 x 27 (mm)\n
ISBN-13: 9781119562238\n \n