Nabil Shovon Ashraf
Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes
Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes
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- More about Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes
Format: Hardback
Length: 129 pages
Publication date: 27 March 2025
Publisher: Springer International Publishing AG
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
Dimension: 240 x 168 (mm)
ISBN-13: 9783031842856
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